Strain in heterogeneous quantum devices with atomic layer deposition
Authors
O’Sullivan, James
Zollitsch, Christoph W
Thomas, Christopher N
Withington, Stafford
Morton, John J L
Publication Date
2021-11-04Journal Title
Materials for Quantum Technology
Publisher
IOP Publishing
Volume
1
Issue
4
Language
en
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Kennedy, O. W., O’Sullivan, J., Zollitsch, C. W., Thomas, C. N., Withington, S., & Morton, J. J. L. (2021). Strain in heterogeneous quantum devices with atomic layer deposition. Materials for Quantum Technology, 1 (4) https://doi.org/10.1088/2633-4356/ac2ef7
Abstract
Abstract: We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left T 2 (or temporal inhomogeneities) unchanged in these natural silicon devices.
Keywords
Paper, strain, ESR, quantum memory, atomic layer deposition
Sponsorship
Engineering and Physical Sciences Research Council (EP/P510270/1)
Horizon 2020 Framework Programme (771493 (LOQO-MOTIONS))
Identifiers
mqtac2ef7, ac2ef7, mqt-100048.r2
External DOI: https://doi.org/10.1088/2633-4356/ac2ef7
This record's URL: https://www.repository.cam.ac.uk/handle/1810/330284
Rights
Licence:
https://creativecommons.org/licenses/by/4.0/
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