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dc.contributor.authorKennedy, Oscar W
dc.contributor.authorO’Sullivan, James
dc.contributor.authorZollitsch, Christoph W
dc.contributor.authorThomas, Christopher N
dc.contributor.authorWithington, Stafford
dc.contributor.authorMorton, John J L
dc.date.accessioned2021-11-04T14:50:44Z
dc.date.available2021-11-04T14:50:44Z
dc.date.issued2021-11-04
dc.date.submitted2021-08-03
dc.identifier.othermqtac2ef7
dc.identifier.otherac2ef7
dc.identifier.othermqt-100048.r2
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/330284
dc.description.abstractAbstract: We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left T 2 (or temporal inhomogeneities) unchanged in these natural silicon devices.
dc.languageen
dc.publisherIOP Publishing
dc.subjectPaper
dc.subjectstrain
dc.subjectESR
dc.subjectquantum memory
dc.subjectatomic layer deposition
dc.titleStrain in heterogeneous quantum devices with atomic layer deposition
dc.typeArticle
dc.date.updated2021-11-04T14:50:43Z
prism.issueIdentifier4
prism.publicationNameMaterials for Quantum Technology
prism.volume1
dc.identifier.doi10.17863/CAM.77728
dcterms.dateAccepted2021-10-12
rioxxterms.versionofrecord10.1088/2633-4356/ac2ef7
rioxxterms.versionVoR
rioxxterms.licenseref.urihttps://creativecommons.org/licenses/by/4.0/
dc.contributor.orcidKennedy, Oscar W [0000-0002-1945-960X]
dc.identifier.eissn2633-4356
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P510270/1)
pubs.funder-project-idHorizon 2020 Framework Programme (771493 (LOQO-MOTIONS))


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