Electroforming-Free HfO<inf>2</inf>:CeO<inf>2</inf> Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
Authors
Dou, H
Gao, X
Zhang, D
Dhole, S
Qi, Z
Yang, B
Hasan, MN
Jia, Q
Publication Date
2021Journal Title
ACS Applied Electronic Materials
ISSN
2637-6113
Publisher
American Chemical Society (ACS)
Volume
3
Issue
12
Pages
5278-5286
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Dou, H., Gao, X., Zhang, D., Dhole, S., Qi, Z., Yang, B., Hasan, M., et al. (2021). Electroforming-Free HfO<inf>2</inf>:CeO<inf>2</inf> Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response. ACS Applied Electronic Materials, 3 (12), 5278-5286. https://doi.org/10.1021/acsaelm.1c00791
Abstract
Resistive switching and anisotropic optical properties have been investigated in two-phase HfO2:CeO2 nanocomposite thin films of different HfO2:CeO2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO3(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO2 pillars embedded in a HfO2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO2 and CeO2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO2:CeO2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.
Sponsorship
Engineering and Physical Sciences Research Council (EP/N004272/1)
Engineering and Physical Sciences Research Council (EP/P007767/1)
EPSRC (EP/T012218/1)
Royal Academy of Engineering (RAEng) (CiET1819\24)
European Commission Horizon 2020 (H2020) ERC (882929)
Identifiers
External DOI: https://doi.org/10.1021/acsaelm.1c00791
This record's URL: https://www.repository.cam.ac.uk/handle/1810/332638
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