Research data supporting ‘Giant Magnetoresistance in a CVD Graphene Constriction'
Batey, Jack O
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Smith, L., Batey, J. O., Alexander-Webber, J., Beere, H., Hofmann, S., Burton, O., Ritchie, D., et al. (2022). Research data supporting ‘Giant Magnetoresistance in a CVD Graphene Constriction' [Dataset]. https://doi.org/10.17863/CAM.65353
The zipped file contains the resistance and conductance data from measurements of graphene channels as a function of magnetic field, temperature, and source-drain bias. Data are provided in separate .txt files for each figure. The README.txt file contains the column information and units for plotting. Specific data included are: Figure 1: (1) Resistance of the primary graphene channel as a function of back gate voltage at magnetic field B = 0 T and temperature T = 0.29 K. (2) Derivative of resistance as a function of back gate voltage at different magnetic fields and back gate voltages. Figure 2: The graphene conductance as a function of magnetic field at temperatures T = 0.29, 0.6, 1, 2, 5, 8, 11.3, 14, 17.8 and 25 K. Figures 3 and 4: Graphene resistance as a function of total source-drain bias applied to the circuit at different back gate voltages V_G = 0.2, 0.26, and 0.32 V, at temperature T = 0.29 K. The graphene resistance at charge neutrality as a function of total source-drain bias is also provided at different temperatures T = 0.29, 2, 5, 8, 11.2, 14.1, 17.8, and 25 K. These data are measured at B = 0 T. Figure 5: Transfer characteristics from a second graphene device. (1) The resistance is given as a function of back gate voltage at magnetic fields B = 0, 3, 6, 9, and 12 T, at temperature T = 1.5 K. (2) The resistance as a function of back gate voltage and magnetic field. (3) The resistance as a function of back gate voltage at different temperatures T = 1.5, 5, 11, and 30 K, and magnetic field B = 12 T. (4) The maximum resistance of the charge neutrality peak ‘a’ near gate voltage ~42 V, and peak ‘b’ at gate voltage 18 V, as a function of B at T = 1.5 K. (5) The resistance of peaks ‘a’ and ‘b’ as a function of temperature at B = 12 T. Data contained in the supporting information is also provided. This includes: (1) The conductance of the primary graphene channel as magnetic field is swept at high carrier density, for temperatures from 0.29 to 25 K. (2) Graphene resistance as a function of total source-drain bias applied to the circuit at different back gate voltages V_G = 0.2, 0.28, 0.3, 0.32, 0.34, 0.38, 0.4, and 0.5 V, at temperature T = ~1.4 K. (3) Raman spectra of the graphene as a function of location over a 10 by 10 micron square area with a 1 micron grid spacing.
These data files can be opened using any text editor.
Multiplexed Device Arrays, High-throughput testing, Graphene, CVD, Giant Magnetoresistance, Fowler-Nordheim, Direct Tunneling
Publication Reference: https://doi.org/10.1021/acsnano.1c09815https://www.repository.cam.ac.uk/handle/1810/333407
Engineering and Physical Sciences Research Council (EP/P005152/1)
Engineering and Physical Sciences Research Council (EP/M508007/1)
Engineering and Physical Sciences Research Council (EP/R029075/1)
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This record's DOI: https://doi.org/10.17863/CAM.65353
Attribution 4.0 International (CC BY 4.0)
Licence URL: https://creativecommons.org/licenses/by/4.0/