Combined SEM-CL and STEM investigation of green InGaN quantum wells
Publication Date
2021Journal Title
Journal of Physics D: Applied Physics
ISSN
0022-3727
Publisher
IOP Publishing
Volume
54
Issue
16
Language
en
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Ding, B., Jarman, J., Kappers, M., & Oliver, R. (2021). Combined SEM-CL and STEM investigation of green InGaN quantum wells. Journal of Physics D: Applied Physics, 54 (16) https://doi.org/10.1088/1361-6463/abddf8
Abstract
<jats:title>Abstract</jats:title>
<jats:p>The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view cathodoluminescence (CL). The sample with the lowest InGaN growth temperature exhibits microscale variations in the CL intensity across the sample surface. Using STEM analysis of such areas, the observed darker patches do not correspond to any observable extended defect. Instead, they are related to changes in the extent of gross-well width fluctuations in the QWs, with more brightly emitting regions exhibiting a high density of such fluctuations, whilst dimmer regions were seen to have InGaN QWs with a more uniform thickness.</jats:p>
Keywords
Paper, Semiconductors and photonics, gallium nitride, green LEDs, quantum well, TEM, cathodoluminescence, AFM
Sponsorship
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)
Engineering and Physical Sciences Research Council (EP/R025193/1)
Identifiers
dabddf8, abddf8, jphysd-125885.r2
External DOI: https://doi.org/10.1088/1361-6463/abddf8
This record's URL: https://www.repository.cam.ac.uk/handle/1810/333303
Rights
Licence:
http://creativecommons.org/licenses/by/4.0
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