Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.
Adeyemo, Stephanie O
Joyce, Hannah J
American Chemical Society (ACS)
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Chen, L., Adeyemo, S. O., Fonseka, H. A., Liu, H., Kar, S., Yang, H., Velichko, A., et al. (2022). Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.. Nano Lett, 22 (8), 3433-3439. https://doi.org/10.1021/acs.nanolett.2c00805
Funder: Leverhulme Trust
The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2-3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30-40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability.
Surface Passivation, Long-term Stability, Photonic Properties, Ultrathin Inp, Thin Nanowire
European Research Council (716471)
Engineering and Physical Sciences Research Council (EP/P000916/1, EP/P006973/1, EP/P000886/1)
External DOI: https://doi.org/10.1021/acs.nanolett.2c00805
This record's URL: https://www.repository.cam.ac.uk/handle/1810/337181
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/