Resonant excitation of quantum emitters in gallium nitride

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Authors
Kianinia, M
Bradac, C
Nguyen, M
Zhu, T
Toth, M
Oliver, R
Aharonovich, I
Publication Date
2018-08-20
Journal Title
Optica
ISSN
2334-2536
Publisher
The Optical Society
Volume
5
Issue
8
Pages
932-933
Type
Article
This Version
VoR
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Citation
Kianinia, M., Bradac, C., Nguyen, M., Zhu, T., Toth, M., Oliver, R., & Aharonovich, I. (2018). Resonant excitation of quantum emitters in gallium nitride. Optica, 5 (8), 932-933. https://doi.org/10.1364/OPTICA.5.000932
Description
© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Abstract
We demonstrate resonant excitation of quantum emitters in gallium nitride (GaN). The emitters are stable under non-resonant excitation and exhibit nearly Fourier-transform-limited lines of ∼250 MHz under coherent excitation, the narrowest reported to date for GaN.
Sponsorship
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)
Identifiers
External DOI: https://doi.org/10.1364/OPTICA.5.000932
This record's URL: https://www.repository.cam.ac.uk/handle/1810/340380
Rights
Publisher's own licence
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