Making clean electrical contacts on 2D transition metal dichalcogenides
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Abstract
Abstract2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in fabricating devices out of 2D semiconductors is the need for ultra-clean contacts with resistances approaching the quantum limit. The lack of high-quality, low-contact-resistance P-type and N-type contacts on 2D TMDs has limited progress towards the next generation of low-power devices, such as the tunnel field-effect transistors. In this Expert Recommendation, we summarize strategies and provide guidance for making clean van der Waals contacts on monolayered TMD semiconductors. We also discuss the physics of contacts in 2D semiconductors and prospects for achieving quantum conductance.
Description
Journal Title
Conference Name
Journal ISSN
2522-5820
Volume Title
Publisher
Publisher DOI
Rights and licensing
Sponsorship
EPSRC (EP/T026200/1)
