Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Abstract

Abstract In this paper, we investigate the optical properties of a zincblende InGaN single quantum well (SQW) structure containing stacking faults (SFs). Cathodoluminescence studies revealed the presence of sharp emission features adjacent to SFs, identified as quantum wires (Qwire) via their spatial anisotropy. Scanning transmission electron microscopy provided evidence of indium rich regions adjacent to SFs which intersect the QW along the [110] and [1–10] directions, whilst atom probe tomography revealed that the indium rich regions have an elongated structure, creating a Qwire. This work sheds light on the intricate relationship between SFs and Qwires in zincblende InGaN SQW structures, offering insights into the underlying mechanisms governing their optical behavior.