In this work the optical properties of a (001) oriented zincblende InGaN single quantum well structure with stacking faults (SF) has been studied by cathodoluminescence spectroscopy (CL) and scanning transmission electron microscopy. Sharp emission features adjacent to stacking faults have been identified as quantum wires via their spatial anisotropy. Elongated indium-rich regions have been found adjacent to {111} stacking faults, which intersect the quantum well along the ⟨110⟩ in-plane directions and create quantum wire-like features.

Description of dataset: File: “Fig_1(d)_spot_spectra.txt” contains normalised CL spot spectra taken from representative regions that appear to be SF-free (S1), In-rich near a SF (S2), and at the edge of a SF (S3).

File: “Fig_2(d)_dataset.txt” contains the CL spectrum extracted from a linescan along SF3 in Figure 2 of the original paper, highlighting several quantum emissions.

File: “Fig_2(f)_dataset.txt” contains the CL spectrum taken from a linescan along SF #3.