Tetrahedral amorphous carbon resistive memories with graphene-based electrodes
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Peer-reviewed
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Abstract
Resistive-switching memories are alternative to Si-based ones, which face
scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C)
shows reversible, non-volatile resistive switching. Here we report polarity
independent ta-C resistive memory devices with graphene-based electrodes. Our
devices show ON/OFF resistance ratios$\sim$4x
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2053-1583
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Engineering and Physical Sciences Research Council (EP/K017144/1)
European Commission (284558)
European Commission (309980)
European Commission (604391)
Engineering and Physical Sciences Research Council (EP/L016087/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (via University of Manchester) (R119256)
Royal Society of Chemistry (unknown)
European Research Council (319277)
Engineering and Physical Sciences Research Council (EP/P02081X/1)
Engineering and Physical Sciences Research Council (EP/M507799/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
Engineering and Physical Sciences Research Council (EP/N010345/1)