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Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization


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Authors

Reid, BPL 
Kocher, C 
Oehler, F 
Chan, CCS 

Abstract

jats:pPolarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.</jats:p>

Description

Keywords

51 Physical Sciences, 40 Engineering, 4018 Nanotechnology, 5104 Condensed Matter Physics

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

106

Publisher

AIP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/H047816/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
This research was supported by the Engineering and Physical Sciences Research Council (EPSRC) UK (Grant No. EP/H047816/1).