Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization
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Abstract
jats:pPolarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.</jats:p>
Description
Keywords
51 Physical Sciences, 40 Engineering, 4018 Nanotechnology, 5104 Condensed Matter Physics
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
106
Publisher
AIP Publishing
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/H047816/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
This research was supported by the Engineering and Physical Sciences Research Council (EPSRC) UK (Grant No. EP/H047816/1).