Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
The Japan Society of Applied Physics
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Corfdir, P., Dussaigne, A., Teisseyre, H., Suski, T., Grzegory, I., Lefebvre, P., Giraud, E., et al. (2013). Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates. http://jjap.jsap.jp/link?JJAP/52/08JC01/
This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.
exciton, GaN, quantum well, radiative lifetime
We acknowledge financial support from the Swiss National Science Foundation through Project No. 129715 and from the Polish National Science Center (Project DEC-2011/ 03/B/ST3/02647). The work was partially supported by the European Union within European Regional Development Fund through Innovative Economy Grant No. POIG.01.01.02-00-008/08. P.C. also acknowledges financing from the European Union Seventh Framework Program under grant agreement No. 265073.
External link: http://jjap.jsap.jp/link?JJAP/52/08JC01/
This record's URL: http://www.dspace.cam.ac.uk/handle/1810/244657