Solution-Based Self-Aligned Hybrid Organic/Metal-Oxide Complementary Logic with Megahertz Operation
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Pecunia, V., Banger, K., Sou, A., & Sirringhaus, H. (2015). Solution-Based Self-Aligned Hybrid Organic/Metal-Oxide Complementary Logic with Megahertz Operation. Organic Electronics, 21 177-183. https://doi.org/10.1016/j.orgel.2015.03.004
We have developed a novel solution-based integration scheme featuring organic and metal-oxide semiconductors with a polymeric gate dielectric. The integration relies on a facile subtractive patterning technique for the semiconductors, which, through the selection of an appropriate etch stopper, leads to ideal transistor performance. We utilized this novel integration scheme to fabricate self-aligned transistors and logic circuits with a high-mobility p-type conjugated polymer and an n-type amorphous oxide semiconductor, along with a composite polymeric gate dielectric, all solution-deposited by spin coating. The resulting complementary logic gates are capable of rail-to-rail transitions, low-voltage operation down to a 3.5 V power supply, and ample noise margins. Thanks to the self-aligned-gate approach and the state-of-the-art balanced mobilities of the selected semiconductors, our logic gates achieve megahertz operation, thus demonstrating the strength of our hybrid integration scheme.
Organic thin-film transistors, Metal-oxide thin-film transistors, Self-aligned-gate transistors, Hybrid complementary logic, Solution-processed electronics
We gratefully acknowledge Mike Hurhangee and Iain McCulloch of Imperial College for supplying the IDT-BT conjugated polymer. We also acknowledge financial support from the European Commission through the POINTS project (FP7-NMP- 2010-Small-4).
External DOI: https://doi.org/10.1016/j.orgel.2015.03.004
This record's URL: https://www.repository.cam.ac.uk/handle/1810/247741
Attribution-NonCommercial-NoDerivs 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by-nc-nd/2.0/uk/
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