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dc.contributor.authorPecunia, Vincenzoen
dc.contributor.authorBanger, Ken
dc.contributor.authorSou, Antonyen
dc.contributor.authorSirringhaus, Henningen
dc.date.accessioned2015-05-18T08:36:24Z
dc.date.available2015-05-18T08:36:24Z
dc.date.issued2015-03-04en
dc.identifier.citationOrganic Electronics Volume 21, June 2015, Pages 177–183. doi:10.1016/j.orgel.2015.03.004en
dc.identifier.issn1566-1199
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/247741
dc.description.abstractWe have developed a novel solution-based integration scheme featuring organic and metal-oxide semiconductors with a polymeric gate dielectric. The integration relies on a facile subtractive patterning technique for the semiconductors, which, through the selection of an appropriate etch stopper, leads to ideal transistor performance. We utilized this novel integration scheme to fabricate self-aligned transistors and logic circuits with a high-mobility p-type conjugated polymer and an n-type amorphous oxide semiconductor, along with a composite polymeric gate dielectric, all solution-deposited by spin coating. The resulting complementary logic gates are capable of rail-to-rail transitions, low-voltage operation down to a 3.5 V power supply, and ample noise margins. Thanks to the self-aligned-gate approach and the state-of-the-art balanced mobilities of the selected semiconductors, our logic gates achieve megahertz operation, thus demonstrating the strength of our hybrid integration scheme.
dc.description.sponsorshipWe gratefully acknowledge Mike Hurhangee and Iain McCulloch of Imperial College for supplying the IDT-BT conjugated polymer. We also acknowledge financial support from the European Commission through the POINTS project (FP7-NMP- 2010-Small-4).
dc.languageEnglishen
dc.language.isoenen
dc.publisherElsevier
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 UK: England & Wales*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/uk/*
dc.subjectOrganic thin-film transistorsen
dc.subjectMetal-oxide thin-film transistorsen
dc.subjectSelf-aligned-gate transistorsen
dc.subjectHybrid complementary logicen
dc.subjectSolution-processed electronicsen
dc.titleSolution-Based Self-Aligned Hybrid Organic/Metal-Oxide Complementary Logic with Megahertz Operationen
dc.typeArticle
dc.description.versionThis is the author accepted manuscript. The final version is available via Elsevier at http://www.sciencedirect.com/science/article/pii/S1566119915000956.en
prism.endingPage183
prism.publicationDate2015en
prism.publicationNameOrganic Electronicsen
prism.startingPage177
prism.volume21en
rioxxterms.versionofrecord10.1016/j.orgel.2015.03.004en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2015-03-04en
dc.contributor.orcidSirringhaus, Henning [0000-0001-9827-6061]
dc.identifier.eissn1878-5530
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/K03099X/1)
pubs.funder-project-idEPSRC (EP/L50516X/1)
rioxxterms.freetoread.startdate2016-03-04


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