Anisotropic growth of non-layered CdS on MoS2 monolayer for functional vertical heterostructures
Advanced Functional Materials
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Zheng, W., Feng, W., Zhang, X., Chen, X., Liu, G., Qiu, Y., Hasan, T., et al. (2016). Anisotropic growth of non-layered CdS on MoS2 monolayer for functional vertical heterostructures. Advanced Functional Materials, 26 2648-2654. https://doi.org/10.1002/adfm.201504775
Two dimensional (2D) semiconductors have emerged as a crucial material for use in next generation optotelectronics. Similar to micro-electronic devices, 2D vertical heterostructures would most likely be the elemental components for future nanoscale electronics and optotelectronics. To date, the components of mostly reported 2D van der Waals heterostructures are restricted to layer crystals. In this communication, we demonstrate that non-layered semiconductors of CdS can be epitaxially grown on to 2D layered MoS2 substrate to form a new quasi vertical heterostructure with clean interface by chemical vapor deposition. Photodetectors based on this CdS/MoS2 heterostructure show broader wavelength response and ~50 fold improvement in photoresponsivity, compared to the devices fabricated from MoS2 monolayer only. This research opens up a way to fabricate a variety of functional quasi heterostructures from non-layer semiconductors.
epitaxial growth, CdS/MoS2 heterostructure, photodetector, responsivity
This work is supported by the National Natural Science Foundation of China (NSFC, No.61172001, 21373068, 21303030), the National key Basic Research Program of China (973 Program) under Grant No. 2013CB632900. TH acknowledges from a Royal Academy of Engineering Research Fellowship (Graphlex).
External DOI: https://doi.org/10.1002/adfm.201504775
This record's URL: https://www.repository.cam.ac.uk/handle/1810/253331