On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.
Type
Article
Change log
Authors
Abstract
We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.
Description
Keywords
Graphene, avalanche multiplication, photodetectors, silicon photonics
Journal Title
Nano Lett
Conference Name
Journal ISSN
1530-6984
1530-6992
1530-6992
Volume Title
16
Publisher
American Chemical Society (ACS)
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/K017144/1)
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/M507799/1)
European Research Council (319277)
European Commission (604391)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (1354817)
Engineering and Physical Sciences Research Council (EP/L016087/1)
Engineering and Physical Sciences Research Council (EP/N010345/1)
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/M507799/1)
European Research Council (319277)
European Commission (604391)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (1354817)
Engineering and Physical Sciences Research Council (EP/L016087/1)
Engineering and Physical Sciences Research Council (EP/N010345/1)
We acknowledge funding from EU Graphene Flagship (No. 604391), ERC Grant Hetero2D, and EPSRC Grant Nos. EP/ K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/ 1, and EP/L016087/1.