High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics
Authors
Zhao, Baodan
Abdi-Jalebi, M
Tabachnyk, M
Glass, Hugh
Kamboj, VS
Nie, WA
Pearson, J
Puttisong, Y
Gödel, KC
Mohite, AD
Publication Date
2017-01-09Journal Title
Advanced Materials
ISSN
0935-9648
Publisher
Wiley
Volume
29
Number
1604744
Language
English
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Zhao, B., Abdi-Jalebi, M., Tabachnyk, M., Glass, H., Kamboj, V., Nie, W., Pearson, J., et al. (2017). High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics. Advanced Materials, 29 (1604744)https://doi.org/10.1002/adma.201604744
Abstract
Low-bandgap CH$_3$NH$_3$(Pb$_x$ Sn$_{1–x}$)I$_3$ (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties have been fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm$^2$ V$^{−1}$ s$^{−1}$) intrinsic carrier mobilities.
Keywords
high mobility perovskites, lead–tin perovskite PV, low-bandgap perovskites, Urbach energy
Relationships
Is supplemented by: https://doi.org/10.17863/CAM.5871
Sponsorship
Engineering and Physical Sciences Research Council (Grant ID: EP/M005143/1), India-UK APEX project, Winton Programme (Cambridge) for the Physics of Sustainability, Cambridge Trust, China Scholarship Council, Nava Technology Limited (PhD scholarship), LDRD program, LANL
Funder references
EPSRC (EP/M005143/1)
Embargo Lift Date
2100-01-01
Identifiers
External DOI: https://doi.org/10.1002/adma.201604744
This record's URL: https://www.repository.cam.ac.uk/handle/1810/261389
Rights
Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International