Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide
Authors
Aria, AI
Van Veldhoven, ZA
Cabrero-Vilatela, A
Martin, M-B
Sui, J
Connolly, MR
Publication Date
2017-03-01Journal Title
2D Materials
ISSN
2053-1583
Publisher
Institute of Physics
Volume
4
Issue
1
Number
011008
Language
English
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Alexander-Webber, J. A., Sagade, A., Aria, A., Van Veldhoven, Z., Braeuninger-Weimer, P., Wang, R., Cabrero-Vilatela, A., et al. (2017). Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide. 2D Materials, 4 (1. 011008)https://doi.org/10.1088/2053-1583/4/1/011008
Abstract
We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) Al$_{2}$O$_{3}$ by tailoring the growth parameters to achieve effective device encapsulation whilst enabling the passivation of charge traps in the underlying gate dielectric. We relate the passivation of charge trap states in the vicinity of the graphene to conformal growth of ALD oxide governed by $\textit{in situ}$ gaseous H$_{2}$O pretreatments. We demonstrate the long term stability of such encapsulation techniques and the resulting insensitivity towards additional lithography steps to enable vertical device integration of graphene for multi-stacked electronics fabrication.
Keywords
graphene, atomic layer deposition, device integration, hysteresis, air stability, Al$_{2}$O$_{3}$
Sponsorship
This work was supported by the EPSRC (Grant Nos. EP/K016636/1, GRAPHTED and EP/L020963/1) and the ERC (Grant No. 279342, InsituNANO). JAA-W acknowledges a Research Fellowship from Churchill College, Cambridge. JS acknowledges support from NUDT. ZAVV acknowledges funding from ESPRC grant EP/L016087/1. ACV acknowledges the Conacyt Cambridge Scholarship and the Roberto Rocca Fellowship. RW acknowledges EPSRC Doctoral Training Award (EP/M506485/1).
Funder references
EPSRC (EP/K016636/1)
European Research Council (279342)
EPSRC (EP/L020963/1)
EPSRC (EP/L016087/1)
EPSRC (EP/M506485/1)
Embargo Lift Date
2100-01-01
Identifiers
External DOI: https://doi.org/10.1088/2053-1583/4/1/011008
This record's URL: https://www.repository.cam.ac.uk/handle/1810/262403
Rights
Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International