Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well
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Peer-reviewed
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Change log
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Abstract
We report the results of an investigation of ambipolar transport in a quantum well of 15 nm width in an undoped GaAs/AlGaAs structure, which was populated either by electrons or holes using positive or negative gate voltage
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1361-648X
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Engineering and Physical Sciences Research Council (EP/H017720/1)
Engineering and Physical Sciences Research Council (EP/K004077/1)