High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures.
Batey, Jack O
Alexander-Webber, Jack Allen
Guilhabert, Benoit JE
Dawson, Martin D
Griffiths, Jonathan P
American Chemical Society
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Smith, L., Batey, J. O., Alexander-Webber, J. A., Fan, Y., Hsieh, Y., Fung, S., Jevtics, D., et al. (2020). High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures.. ACS nano, 14 (11), 15293-15305. https://doi.org/10.1021/acsnano.0c05622
We present multiplexer methodology and hardware for nanoelectronic device characterisation. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials – graphene and semiconductor nanowires – integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapour deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to non-multiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micro-mechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V−1s−1 (lower/upper bound), sub-threshold swing 430 mV dec−1, and on/off ratio 3.1 decades are extracted, similar to non-multiplexed devices. In another array, 8 mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterisation of nanomaterial device arrays which is compatible with a broad range of nanomaterials, transfer techniques and device integration strategies from the forefront of quantum technology research.
Is supplemented by: https://doi.org/10.17863/CAM.58559
J.A.-W. acknowledges the support of his Research Fellowship from the Royal Commission for the Exhibition of 1851, and Royal Society Dorothy Hodgkin Research Fellowship. C.J. acknowledges the support of the Australian Research Council for financial support and Australian National Fabrication Facility, ACT node for facility support. D.J., J.R., B.J.E.G., M.J.S., M.D.D., A.H. acknowledge the support of the European Commission (Grant 828841-ChipAI-H2020-FETOPEN-2018–2020) and the UK's EPSRC (EP/N509760, EP/R03480X/1, EP/P013597/1). L.W.S., Y.-C.H., S.-J.F., and T.-M.C. acknowledge support from the Ministry of Science and Technology (Taiwan).
Engineering and Physical Sciences Research Council (EP/R029075/1)
EPSRC (via University of Glasgow) (EP/R03480X/1)
Royal Commission for the Exhibition of 1851 (RF474/2016)
Royal Society (DHF\F1\191163)
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External DOI: https://doi.org/10.1021/acsnano.0c05622
This record's URL: https://www.repository.cam.ac.uk/handle/1810/311451
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/