Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.
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Authors
Jönsson, Adam
Svensson, Johannes
Fiordaliso, Elisabetta Maria
Lind, Erik
Wernersson, Lars-Erik
Publication Date
2021-12-28Journal Title
ACS Appl Electron Mater
ISSN
2637-6113
Publisher
American Chemical Society (ACS)
Volume
3
Issue
12
Pages
5240-5247
Language
eng
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Jönsson, A., Svensson, J., Fiordaliso, E. M., Lind, E., Hellenbrand, M., & Wernersson, L. (2021). Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.. ACS Appl Electron Mater, 3 (12), 5240-5247. https://doi.org/10.1021/acsaelm.1c00729
Abstract
Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length L g of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage V T shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.
Identifiers
34988463, PMC8717821
External DOI: https://doi.org/10.1021/acsaelm.1c00729
This record's URL: https://www.repository.cam.ac.uk/handle/1810/333697
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