High‐Performance Solution‐Processed Amorphous‐Oxide‐Semiconductor TFTs with Organic Polymeric Gate Dielectrics

Abstract

The general outstanding performance of amorphous‐metal‐oxide transistors utilizing organic polymeric gate dielectrics processed from solution and at low temperature (≤80 °C) is demonstrated. Adopting polymeric dielectrics covering a range of chemistries and relative permittivities, the state‐of‐the‐art charge‐carrier mobility of the resulting devices, their capability of low voltage operation, and their extraordinary stability under bias stress are shown.