Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.


Type
Article
Change log
Authors
Nathan, Arokia 
Alexander-Webber, Jack  ORCID logo  https://orcid.org/0000-0002-9374-7423
Braeuninger-Weimer, Philipp  ORCID logo  https://orcid.org/0000-0001-8677-1647
Sagade, Abhay A 
Abstract

A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

Description
Keywords
Dirac point, Fermi velocity, asymmetric injection, graphene field effect transistor, intrinsic carrier mobility, short-range scattering
Journal Title
ACS Appl Mater Interfaces
Conference Name
Journal ISSN
1944-8244
1944-8252
Volume Title
10
Publisher
American Chemical Society (ACS)
Sponsorship
Engineering and Physical Sciences Research Council (EP/K016636/1)